All bonding experiments were performed in an n2 gas ambient for 3 hours using a karl suss wafer bonder. The deposition takes place via the substeps 1 gas supply of the. Sio2 pecvd data for mems, tsv, photonic devices and rf devices. The pecvd reactor is of a conventional parallel plate. A silicon wafer direct bonding with a thin sio2 layer at the interface was investigated.
Plasma enhanced chemical vapor deposition pecvd by using tetraethylorthosilicate teos, as silicon source, is a wellknown technique to deposit silicon oxide thin films 1, 2. Plasmaactivated direct bonding of diamondoninsulator wafers to. The advantage of this technique is to deposit silicon oxide with a high rate and. Stress control of plasma enhanced chemical vapor deposited. Impact of pecvd sion stoichiometry and postannealing on the silicon surface passivation j. Surface roughness analysis of sio2 for pecvd, pvd and ibd. Bhf rate of sio2 0 nm min 100 nm min 200 nm min 300 nm min 400 nm min 500 nm min 600 nm min 700 nm min.
Boe etch it will always be faster etching than sputtered sio2. Wafer level processes qualification of oxide roughness development effort on cmp with following specifications targeted. The pdoped sio 2, with its refractive index higher than the sio 2. Therefore, by using ftir, the characteristics of the chemical bonding in the deposited thin lms can be investigated. Introduction this report documents the study of deposition characteristics and film properties of silicon nitride sin x thin films deposited by plasma enhanced chemical vapor deposition pecvd. Impact of pecvd sion stoichiometry and postannealing on.
They utilize liquid delivery sources such as teos to deposit films at high speed using a low temperature process. The strong sheath electrical field surrounding the cathodecoupled sample stage generates a high level of ion energy, which enables the deposition of sio 2. Pdf researching the silicon direct wafer bonding with. Request pdf pecvd oxide as intermediate film for wafer bonding. Wafer bonding and layer splitting for microsystems eecs at uc. Pecvd oxide as intermediate film for wafer bonding. Plasmaenhanced chemical vapor deposition wikipedia. Researchers based in singapore and the usa have been developing a process for bonding wafers that allows them to.
Comparative investigation of hydrogen bonding in silicon. Analysis of sio2 thin films deposited by pecvd using an. Samco anode and cathode pecvd technologies offer highly controllable sio2 pecvd processes. Plasma enhanced chemical vapor deposition of sio2 using. Plasma enhanced chemical vapor deposition pecvd of silicon dioxide sio2 using oxford instruments system 100 pecvd meredith metzler. Wafertowafer bonding processes for microstructure fabrication are categorized and described.
Characteristic of sio films deposited by using low. Pdf lowtemperature, strong sio2sio2 covalent wafer. Since the process is carried out at high temperature, some outgas or vaporized species out of a dirty wafer may affect the quality of the deposited film. The opposite happens for tensile stress too few atoms per. Plasmaenhanced chemical vapor deposition of sio thin. We report on the impact of scaling the bonding process to 100 mm wafers via these two wafer. Cmos wafer bonding for backside illuminated image sensors fabrication. Plasma enhanced chemical vapor deposition pecvd ciprian iliescu. Pecvd sio2 sacrificial layers for fabrication of free standing polysilicon filaments eliphas w. Wafer bonding to integrate silicon, gallium arsenide, and. Diamondoninsulator wafers featuring uncd with minimum residual stress are used. Overview of microfabricationtoc waferlevel processes substrates wafer cleaning oxidation doping thinfilm deposition wafer bonding 3. If the wafer is being used for integrated circuit ic fabrication, this is the final processing step the wafer will go through before it is ready to function as a microchip. Pdf analysis of sio2 thin films deposited by pecvd using.
Plasma enhanced chemical vapor deposition pecvd of. A plasma enhanced chemical vapor deposition pecvd system was utilized to deposit silicon dioxide thick film using vapor teos sioc 2 h 5 4 and oxygen. Fabrication of gaasoninsulator via low temperature wafer. Proof of concept for first phase hydrophilic sio2 sio2 bonding chip handling for particle prevention and sample ramp up evaluation of wafer cleaning, activation and bonding using contact. The major problem for integrated optics applications in the cvd. Then pecvd silicon dioxide was selected for the isolation layer fig. Plasmaactivated direct bonding of diamondoninsulator. Analysis of sio2 thin films deposited by pecvd using an oxygenteosargon mixture. Pecvd sio2 grows more amorphously with lots of pinholes than a thermal oxide, affecting the. Inptosi wafer bonding is also presented within this thesis. The samco pd100st and pd270stpm are openload cathode driven plasma enhanced chemical vapor deposition pecvd systems. Doi wafer with chemical mechanical polishing cmp on the diamond surface makes a poor bonding to silicon wafers with thermal oxide. An atomic force microscope afm was employed to characterize the surface roughness and a shearing test was. Spectroscopy ftirs was used to determine the chemical bonding states of the films.
Low temperature bonding of pecvd silicon dioxide layers. Impact of residual stress the deposition rate, the etch rate in a hfbased solution and the residual internal stress of pecvd. The pecvd oxide wafer is bonded to the thermal oxide wafer at room temperature after piranha clean that leaves the wafer surfaces hydrophilic. A recordthin interfacial oxide layer of 60 nm demonstrates sufficient capability for gas byproduct diffusion and absorption, leading to a high surface energy of 2. Our results show that plasma enhanced chemical vapor deposition. And the refractive index of sio 2 film was modified by adding vapor tmp poch 3 3 for doping phosphorous. Analysis of sio2 thin films deposited by pecvd using an oxygen.
As for the quality of pecvd, you can make fairly good quality sio2 but in wet etch rate tests e. Pecvd oxide films are typically compressive, bowing the wafer with the film on the. Plasma assisted low temperature semiconductor wafer bonding. Residual stress and fracture of thick dielectric films for. Teos pecvd and subsequent annealing at temperatures higher than 800 c. Wafer bonding to integrate silicon, gallium arsenide, and gallium nitride. Plasmaenhanced chemical vapor deposition pecvd is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Keywords direct wafer bonding, mems, microelectronics, microelectromechanical systems, soi, silicononinsulator, integrated circuits, bond strength measurement, heterogeneous integration, pre. This process results in reduced wafer bow and eases deep reactive ion etching in the field regions. Lowtemperature, strong sio2sio2 covalent wafer bonding. These processes have an impact in packaging and structure design. The bonding of plasma enhanced chemical vapor deposition pecvd silicon dioxide layers, deposited at 300oc, to thermal silicon dioxide layers is described. Pecvd process parameters used in the sio 2 deposition. Thickness at 115 points per wafer was measured with 5 mm edge exclusion.
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